SS901

SS9018GBU vs SS9018H vs SS9018HBU

 
PartNumberSS9018GBUSS9018HSS9018HBU
DescriptionRF Bipolar Transistors NPN/30V/50mARF Bipolar Transistors NPN/30V/50mA
ManufacturerON SemiconductorFAIRCHILDFairchild Semiconductor
Product CategoryRF Bipolar TransistorsRF Transistors (BJT)RF Transistors (BJT)
RoHSY--
SeriesSS9018--
Transistor TypeBipolar-NPN
TechnologySi-Si
Transistor PolarityNPN-NPN
DC Collector/Base Gain hfe Min72--
Collector Emitter Voltage VCEO Max15 V--
Emitter Base Voltage VEBO5 V--
Continuous Collector Current50 mA-50 mA
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
ConfigurationSingle-Single
Mounting StyleThrough Hole-Through Hole
Package / CaseTO-92--
PackagingBulk-Bulk
Collector Base Voltage VCBO30 V--
DC Current Gain hFE Max198--
Height4.7 mm--
Length4.7 mm--
Operating Frequency1100 MHz-1100 MHz
TypeRF Bipolar Small Signal--
Width3.93 mm--
BrandON Semiconductor / Fairchild--
Gain Bandwidth Product fT1100 MHz--
Maximum DC Collector Current0.05 A-0.05 A
Pd Power Dissipation400 mW--
Product TypeRF Bipolar Transistors--
Factory Pack Quantity10000--
SubcategoryTransistors--
Part # AliasesSS9018GBU_NL--
Unit Weight0.006314 oz-0.006314 oz
Part Aliases--SS9018HBU_NL
Package Case--TO-226-3, TO-92-3 (TO-226AA)
Mounting Type--Through Hole
Supplier Device Package--TO-92-3
Power Max--400mW
Current Collector Ic Max--50mA
Voltage Collector Emitter Breakdown Max--15V
DC Current Gain hFE Min Ic Vce--97 @ 1mA, 5V
Frequency Transition--1.1GHz
Noise Figure dB Typ f---
Gain---
Pd Power Dissipation--400 mW
Collector Emitter Voltage VCEO Max--15 V
Emitter Base Voltage VEBO--5 V
DC Collector Base Gain hfe Min--97
제조사 부분 # 설명 RFQ
ON Semiconductor / Fairchild
ON Semiconductor / Fairchild
SS9018GBU RF Bipolar Transistors NPN/30V/50mA
SS9018H 신규 및 오리지널
ON Semiconductor
ON Semiconductor
SS9018HBU RF Bipolar Transistors NPN/30V/50mA
SS9018GBU RF Bipolar Transistors NPN/30V/50mA
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