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| PartNumber | STB15NM60ND | STB15NM60N |
| Description | MOSFET N-channel 600V, 14A FDMesh II | MOSFET N Ch 600V 0.270 ohm 14A |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-263-3 | TO-263-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 14 A | 14 A |
| Rds On Drain Source Resistance | 299 mOhms | 299 mOhms |
| Vgs Gate Source Voltage | 25 V | 25 V |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 125 W | 125 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Tradename | FDmesh | - |
| Packaging | Reel | Reel |
| Height | 4.6 mm | 4.6 mm |
| Length | 10.4 mm | 10.4 mm |
| Series | STB15NM60ND | STB15NM60 |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 9.35 mm | 9.35 mm |
| Brand | STMicroelectronics | STMicroelectronics |
| Fall Time | 28 ns | 30 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns | 14 ns |
| Factory Pack Quantity | 1000 | 1000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 47 ns | 80 ns |
| Typical Turn On Delay Time | 17 ns | 12 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STB15NM60ND | MOSFET N-channel 600V, 14A FDMesh II | |
| STB15NM60N | MOSFET N Ch 600V 0.270 ohm 14A | ||
| STB15NM60ND | IGBT Transistors MOSFET N-channel 600V, 14A FDMesh II | ||
| STB15NM60N | MOSFET N-CH 600V 14A D2PAK | ||
| STB15NM60ND-CUT TAPE | 신규 및 오리지널 | ||
| STB15NM60NDT4 | 신규 및 오리지널 |