 |  |  | |
| PartNumber | STD11NM60ND | STD11NM60N | STD11NM60N-1 |
| Description | MOSFET N-channel 600V, 10A FDMesh II | MOSFET N-CH 600V 10A DPAK | MOSFET N-CH 600V 10A I-PAK |
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 10 A | - | - |
| Rds On Drain Source Resistance | 450 mOhms | - | - |
| Vgs Gate Source Voltage | 25 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 90 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | FDmesh | - | - |
| Packaging | Reel | - | - |
| Height | 2.4 mm | - | - |
| Length | 6.6 mm | - | - |
| Series | STD11NM60ND | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Width | 6.2 mm | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 9 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 50 ns | - | - |
| Typical Turn On Delay Time | 16 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD11NM60ND | MOSFET N-channel 600V, 10A FDMesh II | |
| STD11NM65N | MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II | ||
| STD11NM65N | RF Bipolar Transistors MOSFET N-Ch 650V 0.425Ohm 11A pwr MDMesh II | ||
| STD11NM60N | MOSFET N-CH 600V 10A DPAK | ||
| STD11NM60N-1 | MOSFET N-CH 600V 10A I-PAK | ||
| STD11NM60ND | MOSFET N-CH 600V 10A DPAK | ||
| STD11NM65M5 11N65 | 신규 및 오리지널 |