 |  | | |
| PartNumber | STD1HN60K3 | STD1HNC60 | STD1HNC60-1 |
| Description | MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET | ||
| Manufacturer | STMicroelectronics | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-252-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 1.2 A | - | - |
| Rds On Drain Source Resistance | 6.7 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 3.75 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 9.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 27 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | SuperMESH | - | - |
| Packaging | Reel | - | - |
| Series | STD1HN60K3 | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | STMicroelectronics | - | - |
| Fall Time | 31 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 10 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 23 ns | - | - |
| Typical Turn On Delay Time | 7 ns | - | - |
| Unit Weight | 0.139332 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD1HN60K3 | MOSFET N-Ch 600V 6.4Ohm 1.2A SuperMESH3 FET | |
| STD1HN60K3 | MOSFET N-CH 600V 1.2A DPAK | ||
| STD1HNC60T4 | MOSFET N-CH 600V 2A DPAK | ||
| STD1HNC60 | 신규 및 오리지널 | ||
| STD1HNC60-1 | 신규 및 오리지널 |