 | |  | |
| PartNumber | STD7NM64N | STD7NM80 | STD7NM80-1 |
| Description | MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
| Package / Case | TO-252-3 | TO-252-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 640 V | 800 V | 800 V |
| Id Continuous Drain Current | 5 A | 6.5 A | 6.5 A |
| Rds On Drain Source Resistance | 1.05 Ohms | 1.05 Ohms | 1.05 Ohms |
| Vgs th Gate Source Threshold Voltage | 4 V | 4 V | - |
| Vgs Gate Source Voltage | 25 V | 30 V | 30 V |
| Qg Gate Charge | 14 nC | 18 nC | 18 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 60 W | 90 W | 90 W |
| Configuration | Single | Single | Single |
| Tradename | MDmesh | MDmesh | MDmesh |
| Packaging | Reel | Reel | Tube |
| Series | STD7NM64N | STD7NM80 | STD7NM80-1 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Fall Time | 12 ns | 10 ns | 10 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 10 ns | 8 ns | 8 ns |
| Factory Pack Quantity | 2500 | 2500 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 26 ns | 35 ns | 35 ns |
| Typical Turn On Delay Time | 7 ns | 20 ns | 20 ns |
| Unit Weight | 0.139332 oz | 0.139332 oz | 0.139332 oz |
| Channel Mode | - | Enhancement | Enhancement |
| Height | - | 2.4 mm | 6.2 mm |
| Length | - | 6.6 mm | 6.6 mm |
| Width | - | 6.2 mm | 2.4 mm |
| Forward Transconductance Min | - | 4 S | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD7NS20T4 | MOSFET N-Ch 200 Volt 7 Amp | |
| STD7NM64N | MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II | ||
| STD7NM80 | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | ||
| STD7NM80-1 | MOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5A | ||
| STD7NM64N | Darlington Transistors MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II | ||
| STD7NS20T4 | MOSFET N-CH 200V 7A DPAK | ||
| STD7NM80-1 | MOSFET N-CH 800V 6.5A IPAK | ||
| STD7NM80 | MOSFET N-CH 800V 6.5A DPAK | ||
| STD7NM80-CUT TAPE | 신규 및 오리지널 | ||
| STD7NM62N-H | 신규 및 오리지널 | ||
| STD7NM801 | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | ||
| STD7NM80T4 | 신규 및 오리지널 | ||
| STD7NS20 | 신규 및 오리지널 | ||
| STD7NS20T4-1 | 신규 및 오리지널 | ||
| STD7NS20TRL | 신규 및 오리지널 | ||
| STD7NM64D | 신규 및 오리지널 |