STD7N

STD7NM80-1 vs STD7NM80-CUT TAPE vs STD7NM801

 
PartNumberSTD7NM80-1STD7NM80-CUT TAPESTD7NM801
DescriptionMOSFET N-Ch, 800V-0.95ohms Mdmesh 6.5APower Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-251-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage800 V--
Id Continuous Drain Current6.5 A--
Rds On Drain Source Resistance1.05 Ohms--
Vgs Gate Source Voltage30 V--
Qg Gate Charge18 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation90 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameMDmesh--
PackagingTube--
Height6.2 mm--
Length6.6 mm--
SeriesSTD7NM80-1--
Transistor Type1 N-Channel--
Width2.4 mm--
BrandSTMicroelectronics--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time35 ns--
Typical Turn On Delay Time20 ns--
Unit Weight0.139332 oz--
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics
STD7NS20T4 MOSFET N-Ch 200 Volt 7 Amp
STD7NS20T4 MOSFET N-CH 200V 7A DPAK
STD7NM80-1 MOSFET N-CH 800V 6.5A IPAK
STD7NM80-CUT TAPE 신규 및 오리지널
STD7NM801 Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251
STD7NM80T4 신규 및 오리지널
STD7NS20 신규 및 오리지널
STD7NS20T4-1 신규 및 오리지널
STD7NS20TRL 신규 및 오리지널
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