 | | |
| PartNumber | STD7NM60N | STD7NM64N |
| Description | MOSFET N-channel 600 V5 A 0.84 Ohm DPAK | MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II |
| Manufacturer | STMicroelectronics | STMicroelectronics |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | TO-252-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 640 V |
| Id Continuous Drain Current | 5 A | 5 A |
| Rds On Drain Source Resistance | 900 mOhms | 1.05 Ohms |
| Pd Power Dissipation | 45 W | 60 W |
| Configuration | Single | Single |
| Tradename | MDmesh | MDmesh |
| Packaging | Reel | Reel |
| Series | STD7NM60N | STD7NM64N |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | STMicroelectronics | STMicroelectronics |
| Product Type | MOSFET | MOSFET |
| Factory Pack Quantity | 2500 | 2500 |
| Subcategory | MOSFETs | MOSFETs |
| Unit Weight | 0.139332 oz | 0.139332 oz |
| Vgs th Gate Source Threshold Voltage | - | 4 V |
| Vgs Gate Source Voltage | - | 25 V |
| Qg Gate Charge | - | 14 nC |
| Minimum Operating Temperature | - | - 55 C |
| Maximum Operating Temperature | - | + 150 C |
| Fall Time | - | 12 ns |
| Rise Time | - | 10 ns |
| Typical Turn Off Delay Time | - | 26 ns |
| Typical Turn On Delay Time | - | 7 ns |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STD7NM60N | MOSFET N-channel 600 V5 A 0.84 Ohm DPAK | |
| STD7NM64N | MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II | ||
| STD7NM64N | Darlington Transistors MOSFET N-Ch 640V 5A 0.88Ohm typ. Mdmesh II | ||
| STD7NM60N | MOSFET N-CH 600V 5A DPAK | ||
| STD7NM60 | 신규 및 오리지널 | ||
| STD7NM60N 7NM60N | 신규 및 오리지널 | ||
| STD7NM60N-1 | 신규 및 오리지널 | ||
| STD7NM62N-H | 신규 및 오리지널 | ||
| STD7NM64D | 신규 및 오리지널 |