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STF10

STF10P6F6 vs STF10NM60ND vs STF10NM65N

 
PartNumberSTF10P6F6STF10NM60NDSTF10NM65N
DescriptionMOSFET P-CH 60V 0.13Ohm 10A STripFET VIMOSFET N-Ch 600V 0.57 Ohm 8A FDmesh II PWRMOSFET N-CH 650V 9A TO-220FP
ManufacturerSTMicroelectronicsSTMicroelectronicsST
Product CategoryMOSFETMOSFETFETs - Single
RoHSYY-
TechnologySiSiSi
Mounting StyleThrough HoleThrough HoleThrough Hole
Package / CaseTO-220FP-3TO-220-3-
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V650 V-
Id Continuous Drain Current10 A8 A-
Rds On Drain Source Resistance160 mOhms600 mOhms-
Vgs th Gate Source Threshold Voltage2 V--
Vgs Gate Source Voltage10 V25 V-
Qg Gate Charge6.4 nC--
Maximum Operating Temperature+ 175 C+ 150 C+ 150 C
Pd Power Dissipation20 W25 W-
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
TradenameSTripFET--
PackagingTubeTubeTube
SeriesSTF10P6F6STF10NM60NDN-channel MDmesh
Transistor Type1 P-Channel Power MOSFET1 N-Channel1 N-Channel
BrandSTMicroelectronicsSTMicroelectronics-
Fall Time3.7 ns-20 ns
Product TypeMOSFETMOSFET-
Rise Time5.3 ns-8 ns
Factory Pack Quantity10001000-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time14 ns-50 ns
Typical Turn On Delay Time64 ns-12 ns
Unit Weight0.011640 oz0.011640 oz0.011640 oz
Minimum Operating Temperature-- 55 C- 55 C
Package Case--TO-220-3
Pd Power Dissipation--25 W
Vgs Gate Source Voltage--25 V
Id Continuous Drain Current--9 A
Vds Drain Source Breakdown Voltage--650 V
Rds On Drain Source Resistance--480 mOhms
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics 		STF10P6F6 MOSFET P-CH 60V 0.13Ohm 10A STripFET VI
STF10P6F6 IGBT Transistors MOSFET P-CH 60V 0.13Ohm 10A STripFET VI
STF10NM65N MOSFET N-CH 650V 9A TO-220FP
STF10NM60ND MOSFET N-CH 600V 8A TO-220FP
STF10NM60NZ2 신규 및 오리지널
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