STFI4N

STFI4N62K3 vs STFI4N62K3 TK3A65D vs STFI4N62K3,4N62K3

 
PartNumberSTFI4N62K3STFI4N62K3 TK3A65DSTFI4N62K3,4N62K3
DescriptionMOSFET N-Ch 620 V 1.7 Ohm 3.8 A, SuperMESH3
ManufacturerSTMicroelectronics--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-281-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage620 V--
Id Continuous Drain Current3.8 A--
Rds On Drain Source Resistance1.7 Ohms--
Vgs th Gate Source Threshold Voltage3.75 V--
Vgs Gate Source Voltage30 V--
Qg Gate Charge22 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation25 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingTube--
SeriesSTFI4N62K3--
Transistor Type1 N-Channel--
BrandSTMicroelectronics--
Fall Time19 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity1500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time29 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.079014 oz--
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics
STFI4N62K3 MOSFET N-Ch 620 V 1.7 Ohm 3.8 A, SuperMESH3
STFI4N62K3 MOSFET N CH 620V 3.8A I2PAKFP
STFI4N62K3 TK3A65D 신규 및 오리지널
STFI4N62K3,4N62K3 신규 및 오리지널
STFI4N62K3,I4N62K3 신규 및 오리지널
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