| PartNumber | STGP15M120F3 | STGP15H60DF | STGP15M65DF2 |
| Description | IGBT Transistors Trench gate field-stop, 1200 V, 15 A, low-loss M series IGBT in a TO-220 package | IGBT Transistors Trench gate H series 600V 15A HiSpd | IGBT Transistors Trench gate field-stop IGBT M series, 650 V, 15 A low loss |
| Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Product Category | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Technology | Si | Si | Si |
| Package / Case | TO-220-3 | TO-220-3 | TO-220-3 |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Configuration | Single | Single | Single |
| Collector Emitter Voltage VCEO Max | 1.2 kV | 600 V | 650 V |
| Collector Emitter Saturation Voltage | 1.85 V | 1.6 V | 1.55 V |
| Maximum Gate Emitter Voltage | 20 V | 20 V | 20 V |
| Continuous Collector Current at 25 C | 30 A | 30 A | 30 A |
| Pd Power Dissipation | 259 W | 115 W | 136 W |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 175 C | + 175 C | + 175 C |
| Series | STGP15M120F3 | STGP15H60DF | STGP15M65DF2 |
| Continuous Collector Current Ic Max | 15 A | 15 A | 30 A |
| Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
| Gate Emitter Leakage Current | 250 nA | 250 nA | +/- 250 uA |
| Product Type | IGBT Transistors | IGBT Transistors | IGBT Transistors |
| Factory Pack Quantity | 1000 | 1000 | 1000 |
| Subcategory | IGBTs | IGBTs | IGBTs |
| RoHS | - | Y | Y |
| Packaging | - | Tube | - |
| Unit Weight | - | 0.211644 oz | - |