STGP8 stock, STGP8, STGP8M120DF3


PartNumber	STGP8M120DF3	STGP8NC60KD	STGP8NC60K
Description	IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package	IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET	IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
Manufacturer	STMicroelectronics	STMicroelectronics	STMicroelectronics
Product Category	IGBT Transistors	IGBT Transistors	IGBT Transistors
Technology	Si	Si	Si
Package / Case	TO-220-3	TO-220-3	TO-220-3
Mounting Style	Through Hole	Through Hole	Through Hole
Configuration	Single	Single	Single
Collector Emitter Voltage VCEO Max	1.2 kV	600 V	600 V
Collector Emitter Saturation Voltage	1.85 V	-	-
Maximum Gate Emitter Voltage	20 V	20 V	20 V
Continuous Collector Current at 25 C	16 A	-	-
Pd Power Dissipation	167 W	-	-
Minimum Operating Temperature	- 55 C	- 55 C	- 55 C
Maximum Operating Temperature	+ 175 C	+ 150 C	+ 150 C
Series	STGP8M120DF3	STGP8NC60KD	STGP8NC60K
Continuous Collector Current Ic Max	8 A	7 A	15 A
Brand	STMicroelectronics	STMicroelectronics	STMicroelectronics
Gate Emitter Leakage Current	250 uA	-	-
Product Type	IGBT Transistors	IGBT Transistors	IGBT Transistors
Factory Pack Quantity	1000	1000	1000
Subcategory	IGBTs	IGBTs	IGBTs
RoHS	-	Y	Y
Packaging	-	Tube	Tube
Height	-	9.15 mm	9.15 mm
Length	-	10.4 mm	10.4 mm
Width	-	4.6 mm	4.6 mm
Unit Weight	-	0.211644 oz	0.211644 oz

Search Part Number : "STGP8", Match & Start with "STGP8" - Total : 7

제조사	부분 #	설명
STMicroelectronics	STGP8M120DF3	IGBT Transistors Trench gate field-stop, 1200 V, 8 A low loss M series IGBT in a TO-220 package
	STGP8NC60KD	IGBT Transistors N Ch 500V 0.21 15A Pwr MOSFET
	STGP8NC60K	IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
	STGP8NC60K	IGBT Transistors N Ch 600V 0.270 ohm 14A Pwr MOSFET
	STGP8NC60KD	IGBT 600V 15A 65W TO220
	STGP8NC60KD,GP8NC60KD	신규 및 오리지널
	STGP8NC60KD,GP8NC60KD,ST	신규 및 오리지널

STGP8