 | |  | |
| PartNumber | STGW50HF60S | STGW50H60DF | STGW50H65F |
| Description | IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode | |
| Manufacturer | STMicroelectronics | STMicroelectronics | - |
| Product Category | IGBTs - Single | IGBTs - Single | - |
| Series | 600-650V IGBTs | 600-650V IGBTs | - |
| Packaging | Tube | Tube | - |
| Unit Weight | 0.229281 oz | 0.229281 oz | - |
| Mounting Style | Through Hole | Through Hole | - |
| Package Case | TO-247-3 | TO-247-3 | - |
| Input Type | Standard | Standard | - |
| Mounting Type | Through Hole | Through Hole | - |
| Supplier Device Package | TO-247-3 | TO-247 | - |
| Configuration | Single | - | - |
| Power Max | 284W | 360W | - |
| Reverse Recovery Time trr | - | 55ns | - |
| Current Collector Ic Max | 110A | 100A | - |
| Voltage Collector Emitter Breakdown Max | 600V | 600V | - |
| IGBT Type | - | Trench Field Stop | - |
| Current Collector Pulsed Icm | 130A | 200A | - |
| Vce on Max Vge Ic | 1.45V @ 15V, 30A | 1.8V @ 15V, 50A | - |
| Switching Energy | 250μJ (on), 4.2mJ (off) | 890μJ (on), 860μJ (off) | - |
| Gate Charge | 200nC | 217nC | - |
| Td on off 25°C | 50ns/220ns | 62ns/178ns | - |
| Test Condition | 400V, 30A, 10 Ohm, 15V | 400V, 50A, 10 Ohm, 15V | - |
| Pd Power Dissipation | 284 W | 360 W | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Collector Emitter Voltage VCEO Max | 600 V | - | - |
| Collector Emitter Saturation Voltage | 1.15 V | 1.8 V | - |
| Continuous Collector Current at 25 C | 110 A | 100 A | - |
| Gate Emitter Leakage Current | +/- 100 nA | 250 nA | - |
| Maximum Gate Emitter Voltage | +/- 20 V | +/- 20 V | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
STMicroelectronics |
STGW50HF60SD | IGBT 600V 110A 284W TO247 | |
| STGW50HF60S | IGBT Transistors 60A 600V Very Low Drop IGBT 600Vces | ||
| STGW50H60DF | IGBT Transistors 50A 600V FST IGBT Ultrafast Diode | ||
| STGW50H65F | 신규 및 오리지널 |