PartNumber | STL3N65M2 | STL3N10F7 | STL3N80K5 |
Description | MOSFET N-channel 650 V, 1.6 Ohm typ., 2.3 A MDmesh M2 Power MOSFET in a PowerFLAT 3.3 x 3.3 HV package | MOSFET N-channel 100 V, 0.062 Ohm typ., 4 A STripFET F7 Power MOSFET in a PowerFLAT 2x2 package | MOSFET POWER MOSFET |
Manufacturer | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerFLAT-3.3x3.3-HV-8 | PowerFLAT-2x2-6 | PowerFLAT-5x6-VHV-8 |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 650 V | 100 V | - |
Id Continuous Drain Current | 2.3 A | 4 A | - |
Rds On Drain Source Resistance | 1.6 Ohms | 70 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2 V | 4.5 V | - |
Vgs Gate Source Voltage | 25 V | 20 V | - |
Qg Gate Charge | 5 nC | 7.8 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 22 W | 2.4 W | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | MDmesh | STripFET | - |
Packaging | Reel | Reel | - |
Series | STL3N65M2 | STL3N10F7 | STL3N80K5 |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Brand | STMicroelectronics | STMicroelectronics | STMicroelectronics |
Fall Time | 21.5 ns | 4 ns | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 3.4 ns | 3 ns | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 17 ns | 11 ns | - |
Typical Turn On Delay Time | 6 ns | 6.3 ns | - |
Unit Weight | 0.048678 oz | - | 0.007196 oz |