 |  |  | |
| PartNumber | SUM50020EL-GE3 | SUM50010E-GE3 | SUM50020E-GE3 |
| Description | MOSFET 60V Vds 20V Vgs D2PAK (TO-263) | MOSFET 60V Vds; 20V Vgs TO-263 | MOSFET N-CH 60V 120A TO263 |
| Manufacturer | Vishay | Vishay | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | TO-263-3 | TO-263-3 | - |
| Tradename | TrenchFET | - | - |
| Packaging | Reel | Tube | - |
| Height | 4.83 mm | - | - |
| Length | 10.67 mm | - | - |
| Series | SUM | - | - |
| Width | 9.65 mm | - | - |
| Brand | Vishay / Siliconix | Vishay / Siliconix | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 800 | 50 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.068654 oz | - | - |
| Number of Channels | - | 1 Channel | - |
| Transistor Polarity | - | N-Channel | - |
| Vds Drain Source Breakdown Voltage | - | 60 V | - |
| Id Continuous Drain Current | - | 150 A | - |
| Rds On Drain Source Resistance | - | 1.75 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 2 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 212 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 175 C | - |
| Pd Power Dissipation | - | 375 W | - |
| Configuration | - | Single | - |
| Channel Mode | - | Enhancement | - |
| Transistor Type | - | 1 N-Channel | - |
| Forward Transconductance Min | - | 120 S | - |
| Fall Time | - | 13 ns | - |
| Rise Time | - | 12 ns | - |
| Typical Turn Off Delay Time | - | 50 ns | - |
| Typical Turn On Delay Time | - | 28 ns | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUM50020EL-GE3 | MOSFET 60V Vds 20V Vgs D2PAK (TO-263) | |
| SUM50010E-GE3 | MOSFET 60V Vds; 20V Vgs TO-263 | ||
Vishay |
SUM50010E-GE3 | MOSFET N-CHAN 60-V D2PAK (TO-263 | |
| SUM50020E-GE3 | MOSFET N-CH 60V 120A TO263 | ||
| SUM50020EL-GE3 | MOSFET N-CH 60V 120A D2PAK | ||
| SUM50020EL | 신규 및 오리지널 |