 |  | | |
| PartNumber | SUM80090E-GE3 | SUM80090E | SUM80090EGE3 |
| Description | MOSFET 150V Vds 20V Vgs D2PAK (TO-263) | ||
| Manufacturer | Vishay | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TO-263-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 150 V | - | - |
| Id Continuous Drain Current | 128 A | - | - |
| Rds On Drain Source Resistance | 7.5 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 95 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 175 C | - | - |
| Pd Power Dissipation | 375 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | TrenchFET | - | - |
| Packaging | Tube | - | - |
| Series | SUM | - | - |
| Transistor Type | 1 N-Channel | - | - |
| Brand | Vishay / Siliconix | - | - |
| Forward Transconductance Min | 52 S | - | - |
| Fall Time | 8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 114 ns | - | - |
| Factory Pack Quantity | 800 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 28 ns | - | - |
| Typical Turn On Delay Time | 15 ns | - | - |
| Unit Weight | 0.077603 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay / Siliconix |
SUM80090E-GE3 | MOSFET 150V Vds 20V Vgs D2PAK (TO-263) | |
| SUM80090E | 신규 및 오리지널 | ||
| SUM80090EGE3 | 신규 및 오리지널 | ||
Vishay |
SUM80090E-GE3 | MOSFET N-CH 150V 128A D2PAK |