 |  | | |
| PartNumber | TC58BVG1S3HBAI4 | TC58BVG1S3HBA14JDH | TC58BVG1S3HBAI4-ND |
| Description | NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) | ||
| Manufacturer | Toshiba | - | - |
| Product Category | NAND Flash | - | - |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | TFBGA-63 | - | - |
| Memory Size | 2 Gbit | - | - |
| Interface Type | Parallel | - | - |
| Organization | 256 M x 8 | - | - |
| Timing Type | Synchronous | - | - |
| Data Bus Width | 8 bit | - | - |
| Supply Voltage Min | 2.7 V | - | - |
| Supply Voltage Max | 3.6 V | - | - |
| Supply Current Max | 30 mA | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 85 C | - | - |
| Packaging | Tray | - | - |
| Memory Type | NAND | - | - |
| Product | NAND Flash | - | - |
| Speed | 25 ns | - | - |
| Architecture | Block Erase | - | - |
| Brand | Toshiba Memory | - | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | - | - |
| Product Type | NAND Flash | - | - |
| Factory Pack Quantity | 210 | - | - |
| Subcategory | Memory & Data Storage | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58BVG1S3HBAI6 | NAND Flash 3.3V 2Gb 24nm I-Temp SLC NAND (EEPROM) | |
| TC58BVG1S3HBAI4 | NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) | ||
| TC58BVG1S3HBA14JDH | 신규 및 오리지널 | ||
| TC58BVG1S3HBAI6 | IC FLASH 2G PARALLEL 67VFBGA Benand | ||
| TC58BVG1S3HBAI4 | 2GB SLC BENAND 24NM BGA 9X11 (EE Benand | ||
| TC58BVG1S3HBAI4-ND | 신규 및 오리지널 | ||
| TC58BVG1S3HBAI6-ND | 신규 및 오리지널 |