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| PartNumber | TC58NVG1S3EBAI5 | TC58NVG1S3ETA00 | TC58NVG1S3ETAI0 |
| Description | NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM) | NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM) | NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM) |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | NAND Flash | NAND Flash | NAND Flash |
| RoHS | Y | Y | Y |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TFBGA-63 | TSOP-48 | TSOP-48 |
| Memory Size | 2 Gbit | 2 Gbit | 2 Gbit |
| Interface Type | Parallel | Parallel | Parallel |
| Organization | 256 M x 8 | 256 M x 8 | 256 M x 8 |
| Timing Type | Synchronous | Synchronous | Synchronous |
| Data Bus Width | 8 bit | 8 bit | 8 bit |
| Supply Voltage Min | 2.7 V | 2.7 V | 2.7 V |
| Supply Voltage Max | 3.6 V | 3.6 V | 3.6 V |
| Supply Current Max | 30 mA | 30 mA | 30 mA |
| Minimum Operating Temperature | - 40 C | 0 C | - 40 C |
| Maximum Operating Temperature | + 85 C | + 70 C | + 85 C |
| Packaging | Tray | Tray | Tray |
| Memory Type | NAND | NAND | NAND |
| Product | NAND Flash | NAND Flash | NAND Flash |
| Speed | 25 ns | 25 ns | 25 ns |
| Architecture | Block Erase | Block Erase | Block Erase |
| Brand | Toshiba Memory | Toshiba Memory | Toshiba Memory |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | Yes | Yes |
| Product Type | NAND Flash | NAND Flash | NAND Flash |
| Factory Pack Quantity | 180 | 96 | 96 |
| Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NVG1S3HTA00 | NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) | |
| TC58NVG1S3HBAI6 | NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) | ||
| TC58NVG1S3EBAI5 | NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM) | ||
| TC58NVG1S3HBAI4 | NAND Flash 3.3V 2Gb 24nm SLC NAND (EEPROM) | ||
| TC58NVG1S3ETA00 | NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM) | ||
| TC58NVG1S3ETAI0 | NAND Flash 3.3V 2Gb 43nm SLC NAND (EEPROM) | ||
| TC58NVG1S3HBAI6 | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | ||
| TC58NVG1S3HTA00 | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | ||
| TC58NVG1S3HBAI4 | EEPROM 3.3V, 2 Gbit CMOS NAND EEPROM | ||
| TC58NVG1S3ETA00 | Flash Memory 1Gb 3.3V SLC NAND Flash Serial EEPROM | ||
| TC58NVG1S3ETAI0 | Flash Memory 1Gb 3.3V SLC NAND Flash Serial EEPROM | ||
| TC58NVG1S3EBAI5 | Flash Memory 2Gb 3.3V SLC NAND Flash EEPROM | ||
| TC58NVG0S3HTAI0(B4H) | 신규 및 오리지널 | ||
| TC58NVG0S3HTAI0B4H | TOSTC58NVG0S3HTAI0B4H IC EEPROM 1GBIT 25 (Alt: TC58NVG0S3HTAI0B4H) | ||
| TC58NVG0S3TA00 | 신규 및 오리지널 | ||
| TC58NVG0SETA00 | 신규 및 오리지널 | ||
| TC58NVG1S3AFT05 | 신규 및 오리지널 | ||
| TC58NVG1S3AFTG05 | 신규 및 오리지널 | ||
| TC58NVG1S3EBAI4(JRH) | 신규 및 오리지널 | ||
| TC58NVG1S3EBAI5LRH | 신규 및 오리지널 | ||
| TC58NVG1S3ETA00(TSOP1-4 | 신규 및 오리지널 | ||
| TC58NVG1S3ETA00. | 신규 및 오리지널 | ||
| TC58NVG1S3ETA000 | 신규 및 오리지널 | ||
| TC58NVG1S3ETA00?? | IC FLASH 2G PARALLEL 48TSOP I | ||
| TC58NVG1S3ETA00BBH | 신규 및 오리지널 | ||
| TC58NVG1S3ETA10 | 신규 및 오리지널 | ||
| TC58NVG1S3ETAIO | 신규 및 오리지널 | ||
| TC58NVG1S3HBAI4JDH | 신규 및 오리지널 | ||
| TC58NVG1S3HBAI4_TRAY | 신규 및 오리지널 | ||
| TC58NVG1S3HTA00(256M) | 신규 및 오리지널 | ||
| TC58NVG1S3HTA000 | 신규 및 오리지널 | ||
| TC58NVG1S3HTA00?? | IC FLASH 2G PARALLEL 48TSOP I | ||
| TC58NVG1S3HTA00B4-H- | 신규 및 오리지널 | ||
| TC58NVG1S3HBAI6JDH | EEPROM Serial 2G-bit 256M x 8 3.3V 67-Pin VFBGA (Alt: TC58NVG1S3HBAI6JDH) | ||
| TC58NVG0S3HTAI0-ND | 신규 및 오리지널 | ||
| TC58NVG1S3ETA00-ND | 신규 및 오리지널 | ||
| TC58NVG1S3ETAI0-ND | 신규 및 오리지널 | ||
| TC58NVG1S3HBAI4-ND | 신규 및 오리지널 | ||
| TC58NVG1S3HBAI6-ND | 신규 및 오리지널 | ||
| TC58NVG1S3HTA00-ND | 신규 및 오리지널 | ||
| TC58NVG1D4BTG00 | 신규 및 오리지널 | ||
| TC58NVG1S3BFT00 | 신규 및 오리지널 | ||
| TC58NVG1S3BFT10 | 신규 및 오리지널 | ||
| TC58NVG1S3EBA14 | 신규 및 오리지널 | ||
| TC58NVG1S3EBAI4 | NAND Flash Serial 3.3V 2Gbit 256M x 8bit 63-Pin TFBGA - Trays (Alt: TC58NVG1S3EBAI4) | ||
| TC58NVG1S3EBAI4JRH | 신규 및 오리지널 | ||
| TC58NVG1S3ETA00B3H | EEPROM Serial 2G-bit 256M x 8 3.3V 48-Pin TSOP-I (Alt: TC58NVG1S3ETA00B3H) | ||
| TC58NVG1S3ETAB3 | 신규 및 오리지널 | ||
| TC58NVG1S3ETAOO | 신규 및 오리지널 | ||
| TC58NVG1S3HTA0 | 신규 및 오리지널 |