TC58NVG0S3HTAI

TC58NVG0S3HTAI0 vs TC58NVG0S3HTAI0(B4H) vs TC58NVG0S3HTAI0-ND

 
PartNumberTC58NVG0S3HTAI0TC58NVG0S3HTAI0(B4H)TC58NVG0S3HTAI0-ND
DescriptionNAND Flash 3.3V 1Gb 24nm I-Temp SLC NAND (EEPROM)
ManufacturerToshiba--
Product CategoryNAND Flash--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseTSOP-48--
Memory Size1 Gbit--
Interface TypeParallel--
Organization128 M x 8--
Data Bus Width8 bit--
Supply Voltage Min2.7 V--
Supply Voltage Max3.6 V--
Supply Current Max30 mA--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 85 C--
PackagingTray--
Memory TypeNAND--
BrandToshiba Memory--
Maximum Clock Frequency---
Moisture SensitiveYes--
Product TypeNAND Flash--
Factory Pack Quantity96--
SubcategoryMemory & Data Storage--
제조사 부분 # 설명 RFQ
Toshiba Memory
Toshiba Memory
TC58NVG0S3HTAI0 NAND Flash 3.3V 1Gb 24nm I-Temp SLC NAND (EEPROM)
TC58NVG0S3HTAI0(B4H) 신규 및 오리지널
TC58NVG0S3HTAI0B4H TOSTC58NVG0S3HTAI0B4H IC EEPROM 1GBIT 25 (Alt: TC58NVG0S3HTAI0B4H)
TC58NVG0S3HTAI0 EEPROM 3.3V, 1 Gbit CMOS NAND EEPROM
TC58NVG0S3HTAI0-ND 신규 및 오리지널
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