 |  |  | |
| PartNumber | TC58NVG2S0HBAI6 | TC58NVG2S0HBAI4 | TC58NVG2S0HBAI4-ND |
| Description | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | |
| Manufacturer | Toshiba | Toshiba | - |
| Product Category | NAND Flash | NAND Flash | - |
| RoHS | Y | Y | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VFBGA-67 | TFBGA-63 | - |
| Memory Size | 4 Gbit | 4 Gbit | - |
| Interface Type | Parallel | Parallel | - |
| Organization | 512 M x 8 | 512 M x 8 | - |
| Data Bus Width | 8 bit | 8 bit | - |
| Supply Voltage Min | 2.7 V | 2.7 V | - |
| Supply Voltage Max | 3.6 V | 3.6 V | - |
| Supply Current Max | 30 mA | 30 mA | - |
| Minimum Operating Temperature | - 40 C | - 40 C | - |
| Maximum Operating Temperature | + 85 C | + 85 C | - |
| Packaging | Tray | Tray | - |
| Memory Type | NAND | NAND | - |
| Brand | Toshiba Memory | Toshiba Memory | - |
| Maximum Clock Frequency | - | - | - |
| Moisture Sensitive | Yes | Yes | - |
| Product Type | NAND Flash | NAND Flash | - |
| Factory Pack Quantity | 338 | 210 | - |
| Subcategory | Memory & Data Storage | Memory & Data Storage | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba Memory |
TC58NVG2S0HBAI6 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | |
| TC58NVG2S0HBAI4 | NAND Flash 3.3V 4Gb 24nm SLC NAND (EEPROM) | ||
| TC58NVG2S0HBAI6JDH | 신규 및 오리지널 | ||
| TC58NVG2S0HBAI6 | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | ||
| TC58NVG2S0HBAI4 | EEPROM 3.3V, 4 Gbit CMOS NAND EEPROM | ||
| TC58NVG2S0HBAI4-ND | 신규 및 오리지널 | ||
| TC58NVG2S0HBAI6-ND | 신규 및 오리지널 |