TIG065E8-TL-H

TIG065E8-TL-H vs TIG065E8-TL-HQ vs TIG065E8-TL-HX

 
PartNumberTIG065E8-TL-HTIG065E8-TL-HQTIG065E8-TL-HX
DescriptionIGBT Transistors HIGH POWER SWITCHING
ManufacturerON Semiconductor--
Product CategoryIGBT Transistors--
RoHSY--
TechnologySi--
Package / CaseECH-8--
Mounting StyleSMD/SMT--
ConfigurationSingle Quad Collector Triple Emitter--
Collector Emitter Voltage VCEO Max400 V--
Collector Emitter Saturation Voltage4.2 V--
Maximum Gate Emitter Voltage4 V--
Continuous Collector Current at 25 C150 A--
Minimum Operating Temperature- 40 C--
Maximum Operating Temperature+ 150 C--
SeriesTIG065E8--
PackagingReel--
Continuous Collector Current Ic Max150 A--
BrandON Semiconductor--
Gate Emitter Leakage Current10 uA--
Product TypeIGBT Transistors--
Factory Pack Quantity3000--
SubcategoryIGBTs--
제조사 부분 # 설명 RFQ
TIG065E8-TL-H IGBT Transistors HIGH POWER SWITCHING
TIG065E8-TL-HQ 신규 및 오리지널
TIG065E8-TL-HX 신규 및 오리지널
ON Semiconductor
ON Semiconductor
TIG065E8-TL-H IGBT Transistors HIGH POWER SWITCHING
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