TJ60S0 stock, TJ60S0, TJ60S06M3L(T6L1,NQ


PartNumber	TJ60S06M3L(T6L1,NQ	TJ60S04M3L(T6L1,NQ
Description	MOSFET P-Ch MOS -60A -60V 100W 7760pF 0.0112	MOSFET P-Ch MOS -60A -40V 90W 6510pF 0.0063
Manufacturer	Toshiba	Toshiba
Product Category	MOSFET	MOSFET
RoHS	Y	Y
Technology	Si	Si
Mounting Style	SMD/SMT	SMD/SMT
Package / Case	TO-252-3	TO-252-3
Number of Channels	1 Channel	1 Channel
Transistor Polarity	P-Channel	P-Channel
Vds Drain Source Breakdown Voltage	60 V	40 V
Id Continuous Drain Current	60 A	60 A
Rds On Drain Source Resistance	11.2 mOhms	6.3 mOhms
Vgs th Gate Source Threshold Voltage	2 V	-
Vgs Gate Source Voltage	10 V	-
Qg Gate Charge	156 nC	-
Maximum Operating Temperature	+ 175 C	-
Pd Power Dissipation	100 W	90 W
Configuration	Single	Single
Channel Mode	Enhancement	-
Packaging	Reel	Reel
Height	2.3 mm	2.3 mm
Length	6.5 mm	6.5 mm
Series	TJ60S06M3L	TJ60S04M3L
Transistor Type	1 P-Channel	1 P-Channel
Width	5.5 mm	5.5 mm
Brand	Toshiba	Toshiba
Fall Time	250 ns	-
Product Type	MOSFET	MOSFET
Rise Time	100 ns	-
Factory Pack Quantity	2000	2000
Subcategory	MOSFETs	MOSFETs
Typical Turn Off Delay Time	970 ns	-
Typical Turn On Delay Time	127 ns	-
Unit Weight	0.011993 oz	0.011993 oz

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TJ60S0