TK20E60

TK20E60W,S1VX vs TK20E60U,S1X(S

 
PartNumberTK20E60W,S1VXTK20E60U,S1X(S
DescriptionMOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20AMOSFET N-Ch MOS 20A 600V 190W 1470pF 0.19
ManufacturerToshibaToshiba
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleThrough HoleThrough Hole
Package / CaseTO-220-3TO-220-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current20 A20 A
Rds On Drain Source Resistance130 mOhms190 mOhms
Vgs th Gate Source Threshold Voltage3.7 V-
Vgs Gate Source Voltage30 V-
Qg Gate Charge48 nC-
Minimum Operating Temperature- 55 C-
Maximum Operating Temperature+ 150 C-
Pd Power Dissipation165 W190 W
ConfigurationSingleSingle
Channel ModeEnhancement-
TradenameDTMOSIVDTMOSIV
Height15.1 mm15.1 mm
Length10.16 mm10.16 mm
SeriesTK20E60WTK20E60U
Transistor Type1 N-Channel1 N-Channel
Width4.45 mm4.45 mm
BrandToshibaToshiba
Fall Time6 ns-
Product TypeMOSFETMOSFET
Rise Time25 ns-
Factory Pack Quantity5050
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time100 ns-
Typical Turn On Delay Time50 ns-
Unit Weight0.211644 oz0.211644 oz
Packaging-Tube
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
TK20E60W,S1VX MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
TK20E60U,S1X(S MOSFET N-Ch MOS 20A 600V 190W 1470pF 0.19
TK20E60W,S1VX IGBT Transistors MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
TK20E60U,S1X(S MOSFET N-Ch MOS 20A 600V 190W 1470pF 0.19
TK20E60 신규 및 오리지널
TK20E60W 신규 및 오리지널
TK20E60U MOSFET, N CHANNEL, 600V, 20A, TO220, Transistor Polarity:N Channel, Continuous Drain Current Id:20A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.19ohm, Rds(on) Test Voltage Vgs:10V, T
TK20E60U K20E60U 신규 및 오리지널
TK20E60U,S1X 신규 및 오리지널
TK20E60US1X(S 신규 및 오리지널
TK20E60W,S1VX(S 신규 및 오리지널
TK20E60W5 신규 및 오리지널
TK20E60WS1VX MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A
TK20E60WS1VX-ND 신규 및 오리지널
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