 |  | | |
| PartNumber | TK25E60X,S1X | TK25E60X | TK25E60X S1X(S |
| Description | MOSFET Power MOSFET N-Channel | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | Through Hole | - | - |
| Package / Case | TO-220-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 600 V | - | - |
| Id Continuous Drain Current | 25 A | - | - |
| Rds On Drain Source Resistance | 105 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2.5 V | - | - |
| Vgs Gate Source Voltage | 30 V | - | - |
| Qg Gate Charge | 40 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 180 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | DTMOSIV | - | - |
| Packaging | Tube | - | - |
| Height | 15.1 mm | - | - |
| Length | 10.16 mm | - | - |
| Series | TK25E60X | - | - |
| Width | 4.45 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 15 ns | - | - |
| Factory Pack Quantity | 50 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 90 ns | - | - |
| Typical Turn On Delay Time | 45 ns | - | - |
| Unit Weight | 0.211644 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
TK25E60X5,S1X | MOSFET Power MOSFET N-Channel | |
| TK25E60X,S1X | MOSFET Power MOSFET N-Channel | ||
| TK25E60X | 신규 및 오리지널 | ||
| TK25E60X S1X(S | 신규 및 오리지널 | ||
| TK25E60X5 | 신규 및 오리지널 | ||
| TK25E60X5,S1X(S | 신규 및 오리지널 | ||
| TK25E60X5S1X | 신규 및 오리지널 | ||
| TK25E60X5S1X(S | 신규 및 오리지널 | ||
| TK25E60XS1X(S | 신규 및 오리지널 | ||
| TK25E60X5S1X-ND | 신규 및 오리지널 | ||
| TK25E60XS1X-ND | 신규 및 오리지널 |