| PartNumber | TK290A60Y,S4X | TK290P60Y,RQ | TK290A65Y,S4X |
| Description | MOSFET N-Ch DTMOSV 600V 35W 730pF 11.5A | MOSFET N-Ch DTMOSV 650V 100W 730pF 11.5A | MOSFET N-Ch DTMOSV 650V 35W 730pF 11.5A |
| Manufacturer | Toshiba | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-220SIS-3 | DPAK-3 | TO-220SIS-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 650 V |
| Id Continuous Drain Current | 11.5 A | 11.5 A | 11.5 A |
| Rds On Drain Source Resistance | 230 mOhms | 230 mOhms | 230 mOhms |
| Vgs th Gate Source Threshold Voltage | 3 V | 3 V | 3 V |
| Vgs Gate Source Voltage | 30 V | 30 V | 30 V |
| Qg Gate Charge | 25 nC | 25 nC | 25 nC |
| Minimum Operating Temperature | - | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 35 W | 100 W | 35 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Tradename | DTMOSV | DTMOSV | DTMOSV |
| Packaging | Tube | Reel | Tube |
| Series | TK290A60Y | TK290P60Y | TK290A65Y |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Toshiba | Toshiba | Toshiba |
| Fall Time | 8.5 ns | 8.5 ns | 8.5 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 25 ns | 25 ns | 25 ns |
| Factory Pack Quantity | 50 | 2000 | 50 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 170 ns | 170 ns | 170 ns |
| Typical Turn On Delay Time | 65 ns | 65 ns | 65 ns |
| Unit Weight | 0.068784 oz | - | 0.068784 oz |