TK40E10N

TK40E10N1,S1X vs TK40E10N1 vs TK40E10N1 S1X

 
PartNumberTK40E10N1,S1XTK40E10N1TK40E10N1 S1X
DescriptionMOSFET 40V N0Ch PWR FET 90A 126W 3000pF
ManufacturerToshiba--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleThrough Hole--
Package / CaseTO-220-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage40 V--
Id Continuous Drain Current90 A--
Rds On Drain Source Resistance8.2 mOhms--
Vgs Gate Source Voltage10 V--
Pd Power Dissipation126 W--
ConfigurationSingle--
Height15.1 mm--
Length10.16 mm--
SeriesTK40E10N1--
Transistor Type1 N-Channel--
Width4.45 mm--
BrandToshiba--
Product TypeMOSFET--
Factory Pack Quantity50--
SubcategoryMOSFETs--
Unit Weight0.211644 oz--
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
TK40E10N1,S1X MOSFET 40V N0Ch PWR FET 90A 126W 3000pF
TK40E10N1,S1X MOSFET 40V N0Ch PWR FET 90A 126W 3000pF
TK40E10N1 신규 및 오리지널
TK40E10N1 S1X 신규 및 오리지널
TK40E10N1,S1X(S 신규 및 오리지널
TK40E10N1S1X X35 PB-F POWER MOSFET TRANSISTOR TO-220AB(OS) MOQ=50 PD=190W F=1MHZ - Rail/Tube (Alt: TK40E10N1,S1X)
TK40E10N1S1X(S 신규 및 오리지널
TK40E10N1S1X-ND 신규 및 오리지널
Top