TK4P60

TK4P60DB(T6RSS-Q) vs TK4P60DA(T6RSS-Q)

 
PartNumberTK4P60DB(T6RSS-Q)TK4P60DA(T6RSS-Q)
DescriptionMOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 OhmMOSFET N-Ch MOS 3.5A 600V 80W 490pF 2.2
ManufacturerToshibaToshiba
Product CategoryMOSFETMOSFET
RoHSYY
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseTO-252-3TO-252-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage600 V600 V
Id Continuous Drain Current3.7 A3.5 A
Rds On Drain Source Resistance2 Ohms2.2 Ohms
Pd Power Dissipation80 W80 W
ConfigurationSingleSingle
PackagingReelReel
Height2.3 mm2.3 mm
Length6.5 mm6.5 mm
SeriesTK4P60DBTK4P60DA
Transistor Type1 N-Channel1 N-Channel
Width5.5 mm5.5 mm
BrandToshibaToshiba
Product TypeMOSFETMOSFET
Factory Pack Quantity20002000
SubcategoryMOSFETsMOSFETs
Unit Weight0.139332 oz0.139332 oz
제조사 부분 # 설명 RFQ
Toshiba
Toshiba
TK4P60DB(T6RSS-Q) MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
TK4P60DA(T6RSS-Q) MOSFET N-Ch MOS 3.5A 600V 80W 490pF 2.2
TK4P60DA(T6RSS-Q) MOSFET N-Ch MOS 3.5A 600V 80W 490pF 2.2
TK4P60DB(T6RSS-Q) MOSFET N-Ch MOS 3.7A 600V 80W 540pF 2.0 Ohm
TK4P60 신규 및 오리지널
TK4P60BD 신규 및 오리지널
TK4P60D RQ 신규 및 오리지널
TK4P60D RQ(S 신규 및 오리지널
TK4P60DA MOSFET, N CHANNEL, 600V, 3.5A, DPAK, Transistor Polarity:N Channel, Continuous Drain Current Id:3.5A, Drain Source Voltage Vds:600V, On Resistance Rds(on):1.7ohm, Rds(on) Test Voltage Vgs:10V, T
TK4P60DA TK4P60D 신규 및 오리지널
TK4P60DA(T6RSS-Q 신규 및 오리지널
TK4P60DB(T6RDV,Q,S) 신규 및 오리지널
TK4P60DB(T6RDVQS 신규 및 오리지널
TK4P60DRQ 신규 및 오리지널
TK4P60DRQ(S 신규 및 오리지널
TK4P60DBT6RSS-Q 신규 및 오리지널
TK4P60DA(T6RSS-Q)-ND 신규 및 오리지널
TK4P60DB(T6RSS-Q)-ND 신규 및 오리지널
TK4P60D 신규 및 오리지널
TK4P60DB 신규 및 오리지널
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