| PartNumber | TK8A50D(STA4,Q,M) | TK8A50DA(STA4,Q,M) |
| Description | MOSFET N-Ch FET 500V 4.0s IDSS 10 uA 0.7 Ohm | MOSFET N-Ch MOS 7.5A 500V 35W 700pF 1.04 Ohm |
| Manufacturer | Toshiba | Toshiba |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-220SIS-3 | TO-220FP-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 500 V | 500 V |
| Id Continuous Drain Current | 8 A | 7.5 A |
| Rds On Drain Source Resistance | 850 mOhms | 760 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 4.4 V |
| Vgs Gate Source Voltage | 10 V | 30 V |
| Qg Gate Charge | 16 nC | 16 nC |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 40 W | 35 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | - |
| Tradename | DTMOSIV | DTMOSIV |
| Height | 15 mm | 15 mm |
| Length | 10 mm | 10 mm |
| Series | TK8A50D | TK8A50DA |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Width | 4.5 mm | 4.5 mm |
| Brand | Toshiba | Toshiba |
| Forward Transconductance Min | 1 S | 1 S |
| Fall Time | 12 ns | 11 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 20 ns | 20 ns |
| Factory Pack Quantity | 50 | 50 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 60 ns | 60 ns |
| Typical Turn On Delay Time | 40 ns | 40 ns |
| Unit Weight | 0.068784 oz | 0.059966 oz |
| Minimum Operating Temperature | - | - 55 C |
| Product | - | MOSFET |
| Type | - | N-Channel Silicon MOSFET |