| PartNumber | TN0604N3-G-P005 | TN0604N3-G | TN0604N3-G P014 |
| Description | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 40V 0.75Ohm | MOSFET N-CH Enhancmnt Mode MOSFET |
| Manufacturer | Microchip | Microchip | Microchip |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 40 V | 40 V | 40 V |
| Id Continuous Drain Current | 700 mA | 700 mA | 700 mA |
| Rds On Drain Source Resistance | 1.6 Ohms | 750 mOhms | 1.6 Ohms |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Bulk | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Microchip Technology | Microchip Technology | Microchip Technology |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 2000 | 1000 | 2000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
| Vgs th Gate Source Threshold Voltage | - | 600 mV | - |
| Vgs Gate Source Voltage | - | 10 V | 20 V |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 740 mW | 740 mW |
| Height | - | 5.33 mm | 5.33 mm |
| Length | - | 5.21 mm | 5.21 mm |
| Type | - | FET | - |
| Width | - | 4.19 mm | 4.19 mm |
| Forward Transconductance Min | - | 500 mS | - |
| Fall Time | - | 20 ns | 20 ns |
| Rise Time | - | 6 ns | 6 ns |
| Typical Turn Off Delay Time | - | 25 ns | 25 ns |
| Typical Turn On Delay Time | - | 10 ns | 10 ns |
| Product | - | - | MOSFET Small Signal |