TN251

TN2510N8-G vs TN2510 vs TN2510N8

 
PartNumberTN2510N8-GTN2510TN2510N8
DescriptionMOSFET 100V 1.5OhmMOSFET 100V 1.5Ohm
ManufacturerMicrochip--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-89-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage100 V--
Id Continuous Drain Current730 mA--
Rds On Drain Source Resistance1.5 Ohms--
Vgs th Gate Source Threshold Voltage600 mV--
Vgs Gate Source Voltage10 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.6 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.6 mm--
Length4.6 mm--
ProductMOSFET Small Signal--
Transistor Type1 N-Channel--
TypeFET--
Width2.6 mm--
BrandMicrochip Technology--
Forward Transconductance Min400 mS--
Fall Time10 ns--
Product TypeMOSFET--
Rise Time10 ns--
Factory Pack Quantity2000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time20 ns--
Typical Turn On Delay Time10 ns--
Unit Weight0.001862 oz--
제조사 부분 # 설명 RFQ
Microchip Technology
Microchip Technology
TN2510N8-G MOSFET 100V 1.5Ohm
TN2510 신규 및 오리지널
TN2510N8 MOSFET 100V 1.5Ohm
TN2510N8-G MOSFET N-CH 100V 730MA SOT89-3
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