PartNumber | TN2535N8-G | TN2535N8 | TN2535 |
Description | RF Bipolar Transistors MOSFET 350V 10Ohm | MOSFET 350V 10Ohm | |
Manufacturer | - | ||
Product Category | IC Chips | IC Chips | - |
Packaging | Reel | Reel | - |
Unit Weight | 0.001862 oz | 0.001862 oz | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package Case | SOT-89-3 | SOT-89-3 | - |
Technology | Si | Si | - |
Number of Channels | 1 Channel | 1 Channel | - |
Configuration | Single | Single | - |
Transistor Type | 1 N-Channel | 1 N-Channel | - |
Pd Power Dissipation | 1.6 W | 1.6 W | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Fall Time | 15 ns | 15 ns | - |
Rise Time | 15 ns | 15 ns | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Id Continuous Drain Current | 283 mA | 283 mA | - |
Vds Drain Source Breakdown Voltage | 350 V | 350 V | - |
Rds On Drain Source Resistance | 10 Ohms | 10 Ohms | - |
Transistor Polarity | N-Channel | N-Channel | - |
Typical Turn Off Delay Time | 25 ns | 25 ns | - |
Typical Turn On Delay Time | 20 ns | 20 ns | - |
Channel Mode | Enhancement | Enhancement | - |