PartNumber | TP65H035WSQA | TP65H035WS | TP65H050WS |
Description | MOSFET GAN FET 650V 47.2A TO247 | MOSFET GAN FET 650V 46.5A TO247 | MOSFET GAN FET 650V 34A TO247 |
Manufacturer | Transphorm | Transphorm | Transphorm |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | GaN Si | GaN Si | GaN Si |
Mounting Style | Through Hole | Through Hole | Through Hole |
Package / Case | TO-247-3 | TO-247-3 | TO-247-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 650 V | 650 V | 650 V |
Id Continuous Drain Current | 47.2 A | 46.5 A | 36 A |
Rds On Drain Source Resistance | 41 mOhms | 41 mOhms | 60 mOhms |
Vgs th Gate Source Threshold Voltage | 3.4 V | 3.3 V | 3.3 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 24 nC | 36 nC | 24 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 175 C | + 150 C | + 150 C |
Pd Power Dissipation | 187 W | 156 W | 119 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Transphorm | Transphorm | Transphorm |
Fall Time | 12 ns | 11.5 ns | 11 ns |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 ns | 13.5 ns | 11 ns |
Factory Pack Quantity | 30 | 30 | 30 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 98 ns | 98.5 ns | 86 ns |
Typical Turn On Delay Time | 69 ns | 69 ns | 51 ns |