 |  | | |
| PartNumber | TPH2900ENH,L1Q | TPH2900ENH | TPH2900ENHL1Q(M |
| Description | MOSFET Power MOSFET N-Channel | ||
| Manufacturer | Toshiba | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOP-Advance-8 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 200 V | - | - |
| Id Continuous Drain Current | 33 A | - | - |
| Rds On Drain Source Resistance | 24 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 2 V | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 22 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 78 W | - | - |
| Configuration | Single | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Height | 0.95 mm | - | - |
| Length | 5 mm | - | - |
| Series | TPH2900ENH | - | - |
| Width | 5 mm | - | - |
| Brand | Toshiba | - | - |
| Fall Time | 12 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8 ns | - | - |
| Factory Pack Quantity | 5000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 36 ns | - | - |
| Typical Turn On Delay Time | 20 ns | - | - |
| Unit Weight | 0.030018 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Toshiba |
TPH2900ENH,L1Q | MOSFET Power MOSFET N-Channel | |
| TPH2900ENH | 신규 및 오리지널 | ||
| TPH2900ENHL1Q(M | 신규 및 오리지널 | ||
| TPH2900ENHL1QCT-ND | 신규 및 오리지널 | ||
| TPH2900ENHL1QDKR-ND | 신규 및 오리지널 | ||
| TPH2900ENHL1QTR-ND | 신규 및 오리지널 |