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| PartNumber | TSM1NB60SCT A3 | TSM1NB60SCT A3G |
| Description | MOSFET 600V 0.5A N Channel Mosfet | MOSFET 600V 0,5Amp N channel Mosfet |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET |
| RoHS | Y | Y |
| Technology | Si | Si |
| Mounting Style | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V |
| Id Continuous Drain Current | 500 mA | 500 mA |
| Rds On Drain Source Resistance | 10 Ohms | 8 Ohms |
| Vgs th Gate Source Threshold Voltage | 2.5 V | 2.5 V |
| Vgs Gate Source Voltage | 10 V | 10 V |
| Qg Gate Charge | 6.1 nC | 6.1 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 2.5 W | 2.5 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Packaging | Ammo Pack | Reel |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor |
| Forward Transconductance Min | 0.8 S | - |
| Fall Time | 14.9 ns | 14.9 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 6.8 ns | 6.8 ns |
| Factory Pack Quantity | 2000 | 2000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 15.3 ns | 15.3 ns |
| Typical Turn On Delay Time | 7.7 ns | 7.7 ns |
| Unit Weight | 0.016000 oz | 0.007654 oz |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM1NB60SCT A3 | MOSFET 600V 0.5A N Channel Mosfet | |
| TSM1NB60SCT A3G | MOSFET 600V 0,5Amp N channel Mosfet | ||
| TSM1NB60SCT A3 | MOSFET 600V 0.5A N Channel Mosfet | ||
| TSM1NB60SCT A3G | MOSFET N-CH 600V 500MA TO92 | ||
| TSM1NB60HCT A3 | MOSFET 600V 0.4A N Channel Mosfet | ||
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