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| PartNumber | TSM230N06PQ56 RLG |
| Description | MOSFET 60V N 44Amp 238mohm channel Mosfet |
| Manufacturer | Taiwan Semiconductor |
| Product Category | MOSFET |
| RoHS | Y |
| Technology | Si |
| Mounting Style | SMD/SMT |
| Package / Case | PDFN56-8 |
| Number of Channels | 1 Channel |
| Transistor Polarity | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V |
| Id Continuous Drain Current | 44 A |
| Rds On Drain Source Resistance | 20 mOhms |
| Vgs th Gate Source Threshold Voltage | 1.8 V |
| Vgs Gate Source Voltage | 10 V |
| Qg Gate Charge | 28 nC |
| Minimum Operating Temperature | - 55 C |
| Maximum Operating Temperature | + 150 C |
| Pd Power Dissipation | 83 W |
| Configuration | Single |
| Channel Mode | Enhancement |
| Packaging | Reel |
| Transistor Type | 1 N-Channel |
| Brand | Taiwan Semiconductor |
| Fall Time | 8.2 ns |
| Product Type | MOSFET |
| Rise Time | 38 ns |
| Factory Pack Quantity | 2500 |
| Subcategory | MOSFETs |
| Typical Turn Off Delay Time | 34 ns |
| Typical Turn On Delay Time | 7.2 ns |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM230N06PQ56 RLG | MOSFET 60V N 44Amp 238mohm channel Mosfet |