 | |  | |
| PartNumber | TSM2306CX | TSM2306CX RFG | TSM2306CX RF |
| Description | MOSFET 30V N channel MOSFET | MOSFET 30V N channel Mosfet | |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | SEP |
| Product Category | MOSFET | MOSFET | IC Chips |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | SOT-23-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
| Id Continuous Drain Current | 3.5 A | 3.5 A | - |
| Rds On Drain Source Resistance | 46 mOhms | 46 mOhms | - |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 10 V | - |
| Qg Gate Charge | 4.2 nC | 4.2 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.25 W | 1.25 W | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Type | N-Channel | - | - |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 9 ns | 9 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 19 ns | 19 ns | - |
| Factory Pack Quantity | 3000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 13 ns | 13 ns | - |
| Typical Turn On Delay Time | 4.2 ns | 4.2 ns | - |
| Unit Weight | 0.000282 oz | 0.000282 oz | - |
| Moisture Sensitive | - | Yes | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Taiwan Semiconductor |
TSM2306CX | MOSFET 30V N channel MOSFET | |
| TSM2306CX RFG | MOSFET 30V N channel Mosfet | ||
| TSM2306CX RFG | Trans MOSFET N-CH 30V 3.5A 3-Pin SOT-23 | ||
| TSM2306CX | MOSFET 30V N channel MOSFET | ||
| TSM2306CX RF | 신규 및 오리지널 | ||
| TSM2306CXRF | 신규 및 오리지널 | ||
| TSM2306CXRFG | 신규 및 오리지널 |