TSM4NB60CI stock, TSM4NB60CI, TSM4NB60CI C0G


PartNumber	TSM4NB60CI C0G	TSM4NB60CI C0	TSM4NB60CI
Description	MOSFET 600V N channel Mosfet	MOSFET 600V N channl Mosfet
Manufacturer	Taiwan Semiconductor	Taiwan Semiconductor	Taiwan Semiconductor
Product Category	MOSFET	MOSFET	Transistors - FETs, MOSFETs - Single
RoHS	Y	Y	-
Technology	Si	Si	Si
Mounting Style	Through Hole	Through Hole	Through Hole
Package / Case	ITO-220-3	TO-220-3	-
Number of Channels	1 Channel	1 Channel	1 Channel
Transistor Polarity	N-Channel	N-Channel	N-Channel
Vds Drain Source Breakdown Voltage	600 V	600 V	-
Id Continuous Drain Current	4 A	4 A	-
Rds On Drain Source Resistance	2.2 Ohms	2.5 Ohms	-
Vgs th Gate Source Threshold Voltage	2.5 V	2.5 V	-
Vgs Gate Source Voltage	10 V	10 V	-
Qg Gate Charge	14.5 nC	14.5 nC	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Pd Power Dissipation	25 W	25 W	-
Configuration	Single	Single	-
Channel Mode	Enhancement	Enhancement	-
Packaging	Tube	Tube	Tube
Transistor Type	1 N-Channel	1 N-Channel	1 N-Channel
Brand	Taiwan Semiconductor	Taiwan Semiconductor	-
Fall Time	19 ns	19 ns	-
Product Type	MOSFET	MOSFET	-
Rise Time	20 ns	20 ns	-
Factory Pack Quantity	2000	1000	-
Subcategory	MOSFETs	MOSFETs	-
Typical Turn Off Delay Time	30 ns	30 ns	-
Typical Turn On Delay Time	11 ns	11 ns	-
Unit Weight	0.059966 oz	0.211644 oz	0.211644 oz
Forward Transconductance Min	-	2.6 S	-
Package Case	-	-	TO-220-3
Id Continuous Drain Current	-	-	4 A
Vds Drain Source Breakdown Voltage	-	-	600 V
Rds On Drain Source Resistance	-	-	2.5 Ohms

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TSM4NB60CI