| PartNumber | TSM60N900CI | TSM60N900CP | TSM60N900CH |
| Description | MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm | MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm | MOSFET Power MOSFET, N-CHAN 600V, 4.5A, 900mOhm |
| Manufacturer | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | SMD/SMT | Through Hole |
| Package / Case | TO-220-3 | TO-252-3 | TO-251-3 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 600 V | 600 V | 600 V |
| Id Continuous Drain Current | 4.5 A | 4.5 A | 4.5 A |
| Rds On Drain Source Resistance | 720 mOhms | 720 mOhms | 720 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 2 V | 2 V |
| Vgs Gate Source Voltage | 30 V | 10 V | 10 V |
| Qg Gate Charge | 9.7 nC | 9.7 nC | 9.7 nC |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 20 W | 50 W | 50 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Tube | Reel | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Taiwan Semiconductor | Taiwan Semiconductor | Taiwan Semiconductor |
| Fall Time | 12 ns | 12 ns | 12 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 16 ns | 16 ns | 16 ns |
| Factory Pack Quantity | 1000 | 2500 | 1875 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 22 ns | 22 ns | 22 ns |
| Typical Turn On Delay Time | 12 ns | 12 ns | 12 ns |
| Part # Aliases | C0G TSM60N900CI | ROG TSM60N900CP | C5G TSM60N900CH |
| Unit Weight | 0.063493 oz | 0.012346 oz | 0.139332 oz |