 | |  | |
| PartNumber | VN2106N3-G | VN2106N3-G P005 | VN2106N3 |
| Description | MOSFET 60V 4Ohm | MOSFET N-CH Enhancmnt Mode MOSFET | MOSFET 60V 4Ohm |
| Manufacturer | Microchip | Microchip | Microchip Technology |
| Product Category | MOSFET | MOSFET | FETs - Single |
| RoHS | Y | Y | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | TO-92-3 | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 300 mA | 300 mA | - |
| Rds On Drain Source Resistance | 4 Ohms | 6 Ohms | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Minimum Operating Temperature | - 55 C | - | - 55 C |
| Maximum Operating Temperature | + 150 C | - | + 150 C |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Bulk | Reel | Bulk |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | Microchip Technology | - |
| Fall Time | 5 ns | - | 5 ns |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 5 ns | - | 5 ns |
| Factory Pack Quantity | 1000 | 2000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 6 ns | - | 6 ns |
| Typical Turn On Delay Time | 3 ns | - | 3 ns |
| Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
| Series | - | - | - |
| Package Case | - | - | TO-226-3, TO-92-3 (TO-226AA) |
| Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
| Mounting Type | - | - | Through Hole |
| Supplier Device Package | - | - | TO-92-3 |
| FET Type | - | - | MOSFET N-Channel, Metal Oxide |
| Power Max | - | - | 1W |
| Drain to Source Voltage Vdss | - | - | 60V |
| Input Capacitance Ciss Vds | - | - | 50pF @ 25V |
| FET Feature | - | - | Standard |
| Current Continuous Drain Id 25°C | - | - | 300mA (Tj) |
| Rds On Max Id Vgs | - | - | 4 Ohm @ 500mA, 10V |
| Vgs th Max Id | - | - | 2.4V @ 1mA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | - | 1 W |
| Vgs Gate Source Voltage | - | - | 20 V |
| Id Continuous Drain Current | - | - | 300 mA |
| Vds Drain Source Breakdown Voltage | - | - | 60 V |
| Rds On Drain Source Resistance | - | - | 4 Ohms |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip Technology |
VN2106N3-G | MOSFET 60V 4Ohm | |
| VN2106N3-G P013 | MOSFET N-CH Enhancmnt Mode MOSFET | ||
| VN2106N3-G P005 | MOSFET N-CH Enhancmnt Mode MOSFET | ||
| VN2106N3 | MOSFET 60V 4Ohm | ||
| VN2106N3-G | MOSFET N-CH 60V 300MA TO92-3 |