VNS1

VNS1NV04PTR-E vs VNS1NV04P-E vs VNS1NV04DTR-E

 
PartNumberVNS1NV04PTR-EVNS1NV04P-EVNS1NV04DTR-E
DescriptionGate Drivers OMNIFET POWER MOSFET 40V 1.7 AGate Drivers OMNIFET POWER MOSFET 40V 1.7 AGate Drivers N-Ch 40V 1.7A Omni
ManufacturerSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Product CategoryGate DriversGate DriversGate Drivers
RoHSYYY
ProductMOSFET Gate DriversMOSFET Gate Drivers-
TypeLow SideLow SideLow Side
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8SO-8
Number of Outputs1 Output1 Output-
Output Current- 3 A1.7 A-
ConfigurationSingleSingle-
Rise Time500 ns170 ns-
Fall Time600 ns200 ns-
Operating Supply Current150 uA100 uA-
SeriesVNS1NV04P-EVNS1NV04P-EVNS1NV04D-E
QualificationAEC-Q100AEC-Q100-
PackagingReelTubeReel
TechnologySiSiSi
BrandSTMicroelectronicsSTMicroelectronicsSTMicroelectronics
Moisture SensitiveYesYesYes
Product TypeGate DriversGate DriversGate Drivers
Factory Pack Quantity250020002500
SubcategoryPMIC - Power Management ICsPMIC - Power Management ICsPMIC - Power Management ICs
Unit Weight0.004395 oz0.004233 oz0.004395 oz
Number of Drivers-1 Driver-
Pd Power Dissipation-8.3 W-
Minimum Operating Temperature-- 40 C- 40 C
Maximum Operating Temperature-+ 150 C+ 150 C
Shutdown-Yes-
Maximum Turn Off Delay Time-1000 ns-
Maximum Turn On Delay Time-200 ns-
Rds On Drain Source Resistance-250 mOhms-
제조사 부분 # 설명 RFQ
STMicroelectronics
STMicroelectronics
VNS1NV04PTR-E Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
VNS1NV04P-E Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
VNS1NV04TR-E MOSFET POWER AUTOPROTECT 8-SOIC
VNS1NV04DTR-E MOSFET POWER AUTOPROTECT 8-SOIC
VNS1NV04PTR-E MOSFET N-CH 40V 1.7A 8SOIC
VNS1NV04P-E Gate Drivers OMNIFET POWER MOSFET 40V 1.7 A
VNS1NV04PTR 신규 및 오리지널
VNS1NV04PTRE POWER LOAD SWITCH, LOW SIDE, SOIC-8
VNS1NV04TRE 신규 및 오리지널
VNS1NV04PTR-E-CUT TAPE 신규 및 오리지널
VNS1NV04PE 신규 및 오리지널
VNS1NV04TR 1.7 A BUF OR INV BASED PRPHL DRVR, PDSO8
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