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| PartNumber | VP2106N3-G | VP2106 | VP2106N3 |
| Description | MOSFET 60V 12Ohm | MOSFET 60V 12Ohm | |
| Manufacturer | Microchip | Microchip Technology | Microchip Technology |
| Product Category | MOSFET | FETs - Single | FETs - Single |
| RoHS | Y | - | - |
| Technology | Si | Si | Si |
| Mounting Style | Through Hole | Through Hole | Through Hole |
| Package / Case | TO-92-3 | - | - |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | P-Channel | P-Channel | P-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 250 mA | - | - |
| Rds On Drain Source Resistance | 15 Ohms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.5 V | - | - |
| Vgs Gate Source Voltage | 5 V | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1 W | - | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Bulk | Bulk | Bulk |
| Height | 5.33 mm | - | - |
| Length | 5.21 mm | - | - |
| Product | MOSFET Small Signal | - | - |
| Transistor Type | 1 P-Channel | 1 P-Channel | 1 P-Channel |
| Type | FET | - | - |
| Width | 4.19 mm | - | - |
| Brand | Microchip Technology | - | - |
| Forward Transconductance Min | 150 mmho | - | - |
| Fall Time | 4 ns | 5 ns | 5 ns |
| Product Type | MOSFET | - | - |
| Rise Time | 5 ns | 5 ns | 5 ns |
| Factory Pack Quantity | 1000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 5 ns | 5 ns | 5 ns |
| Typical Turn On Delay Time | 4 ns | 4 ns | 4 ns |
| Unit Weight | 0.016000 oz | 0.016000 oz | 0.016000 oz |
| Series | - | - | - |
| Package Case | - | TO-226-3, TO-92-3 (TO-226AA) | TO-226-3, TO-92-3 (TO-226AA) |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Mounting Type | - | Through Hole | Through Hole |
| Supplier Device Package | - | TO-92-3 | TO-92-3 |
| FET Type | - | MOSFET P-Channel, Metal Oxide | MOSFET P-Channel, Metal Oxide |
| Power Max | - | 1W | 1W |
| Drain to Source Voltage Vdss | - | 60V | 60V |
| Input Capacitance Ciss Vds | - | 60pF @ 25V | 60pF @ 25V |
| FET Feature | - | Standard | Standard |
| Current Continuous Drain Id 25°C | - | 250mA (Tj) | 250mA (Tj) |
| Rds On Max Id Vgs | - | 12 Ohm @ 500mA, 10V | 12 Ohm @ 500mA, 10V |
| Vgs th Max Id | - | 3.5V @ 1mA | 3.5V @ 1mA |
| Gate Charge Qg Vgs | - | - | - |
| Pd Power Dissipation | - | 740 mW | 740 mW |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Id Continuous Drain Current | - | - 250 mA | - 250 mA |
| Vds Drain Source Breakdown Voltage | - | - 60 V | - 60 V |
| Rds On Drain Source Resistance | - | 12 Ohms | 12 Ohms |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Microchip Technology |
VP2106N3-G | MOSFET 60V 12Ohm | |
| VP2106 | 신규 및 오리지널 | ||
| VP2106N3 | MOSFET 60V 12Ohm | ||
| VP2106N3-G | MOSFET P-CH 60V 0.25A TO92-3 |