 | | | |
| PartNumber | VS-GT400TH60N | VS-GT75NP120N | VS-GT50TP60N |
| Description | IGBT Modules Output & SW Modules - DIAP IGBT | Rectifiers | IGBT Modules Output & SW Modules - IAP IGBT |
| Manufacturer | Vishay | Vishay | Vishay |
| Product Category | IGBT Modules | Rectifiers | IGBT Modules |
| Configuration | Half Bridge | - | Half Bridge |
| Collector Emitter Voltage VCEO Max | 600 V | - | 600 V |
| Collector Emitter Saturation Voltage | 1.6 V | - | 1.65 V |
| Continuous Collector Current at 25 C | 530 A | - | 85 A |
| Gate Emitter Leakage Current | 400 nA | - | 400 nA |
| Pd Power Dissipation | 1.6 kW | - | 208 W |
| Package / Case | INT-A-PAK | - | INT-A-PAK |
| Maximum Operating Temperature | + 175 C | - | + 175 C |
| Brand | Vishay Semiconductors | Vishay Semiconductors | Vishay Semiconductors |
| Mounting Style | Chassis Mount | - | Chassis Mount |
| Maximum Gate Emitter Voltage | 20 V | - | 20 V |
| Product Type | IGBT Modules | Rectifiers | IGBT Modules |
| Factory Pack Quantity | 12 | - | 24 |
| Subcategory | IGBTs | Diodes & Rectifiers | IGBTs |
| Product | - | Rectifiers | - |
| RoHS | - | - | Y |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Vishay Semiconductors |
VS-GT80DA120U | Discrete Semiconductor Modules 1200V, 80A Tch IGBT SOT-227 Bplr Tnstr | |
| VS-GT400TH60N | IGBT Modules Output & SW Modules - DIAP IGBT | ||
| VS-GT75NP120N | Rectifiers | ||
| VS-GT50TP60N | IGBT Modules Output & SW Modules - IAP IGBT | ||
Vishay |
VS-GT400TH120N | IGBT 1200V 600A 2119W DIAP | |
| VS-GT400TH120U | IGBT 1200V 750A 2344W DIAP | ||
| VS-GT400TH60N | IGBT 600V 530A 1600W DIAP | ||
| VS-GT50TP120N | IGBT 1200V 100A 405W INT-A-PAK | ||
| VS-GT50TP60N | Trans IGBT Module N-CH 600V 85A 7-Pin INT-A-PAK | ||
| VS-GT75LP120N | IGBT 1200V 150A 543W | ||
| VS-GT75NP120N | IGBT 1200V 150A 446W INT-A-PAK | ||
| VS-GT80DA120U | OUTPUT & SW MODULES - SOT-227 IG |