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ZXM

ZXMN2B14FHTA vs ZXMN2B03E6TA vs ZXMN2B01FTA

 
PartNumberZXMN2B14FHTAZXMN2B03E6TAZXMN2B01FTA
DescriptionMOSFET 20V N-Channel MOSFET w/low gate drive capMOSFET 20V N-Ch 4.6 MOSFET w/low gate drive capMOSFET 20V N-Channel MOSFET w/low gate drive cap
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-26-6SOT-23-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage20 V20 V20 V
Id Continuous Drain Current4.3 A5.4 A2.4 A
Rds On Drain Source Resistance55 mOhms40 mOhms100 mOhms
Vgs Gate Source Voltage8 V8 V4.5 V
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.5 W1.7 W806 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
Height1.02 mm1.3 mm1.02 mm
Length3.04 mm3.1 mm3.04 mm
ProductMOSFET Small SignalMOSFET Small SignalMOSFET Small Signal
SeriesZXMN2BZXMN2ZXMN2B01
Transistor Type1 N-Channel1 N-Channel1 N-Channel
Width1.4 mm1.8 mm1.4 mm
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time5.2 ns6.2 ns10.5 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time5.2 ns6.2 ns3.6 ns
Factory Pack Quantity300030003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time30 ns33.9 ns17.8 ns
Typical Turn On Delay Time3.7 ns4.2 ns3.6 ns
Unit Weight0.000282 oz0.000529 oz0.000282 oz
Vgs th Gate Source Threshold Voltage-1 V400 mV
Qg Gate Charge-14.5 nC4.8 nC
Forward Transconductance Min--6.1 S
  • 시작
  • ZXM 630
제조사 부분 # 설명 RFQ
Diodes Incorporated
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