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| PartNumber | ZXMHC6A07N8TC | ZXMHC6A07 | ZXMHC6A07N8TC-CUT TAPE |
| Description | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 4 Channel | - | - |
| Transistor Polarity | N-Channel, P-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.8 A, 1.42 A | - | - |
| Rds On Drain Source Resistance | 250 mOhms, 400 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 3.2 nC, 5.7 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 0.87 W | - | - |
| Configuration | Quad | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | ZXMHC6 | - | - |
| Transistor Type | 2 N-Channel, 2 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 2.3 S, 1.8 S | - | - |
| Fall Time | 2 ns, 5.8 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 1.4 ns, 2.3 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4.9 ns, 13 ns | - | - |
| Typical Turn On Delay Time | 1.8 ns, 1.6 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMHC6A07T8TA | MOSFET 60V UMOS H-Bridge | |
| ZXMHC6A07N8TC | MOSFET Mosfet H-Bridge 60/-60V 1.8/-1.4A | ||
| ZXMHC6A07 | 신규 및 오리지널 | ||
| ZXMHC6A07N8TC | Trans MOSFET N/P-CH 60V 1.8A/1.42A Automotive 8-Pin SO T/R | ||
| ZXMHC6A07T8 | 신규 및 오리지널 | ||
| ZXMHC6A07N8TC-CUT TAPE | 신규 및 오리지널 | ||
| ZXMHC6A07T8TA-CUT TAPE | 신규 및 오리지널 | ||
| ZXMHC6A07T8TA | Darlington Transistors MOSFET 60V UMOS H-Bridge |