ZXMN3A06DN8

ZXMN3A06DN8TA vs ZXMN3A06DN8 vs ZXMN3A06DN8TC

 
PartNumberZXMN3A06DN8TAZXMN3A06DN8ZXMN3A06DN8TC
DescriptionMOSFET Dl 30V N-Chnl UMOSMOSFET 2N-CH 30V 4.9A 8SOIC
ManufacturerDiodes IncorporatedZetexDiodes Incorporated
Product CategoryMOSFETFETs - ArraysFETs - Arrays
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current6.2 A--
Rds On Drain Source Resistance35 mOhms--
Vgs Gate Source Voltage20 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.1 W--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel-Tape & Reel (TR) Alternate Packaging
Height1.5 mm--
Length5 mm--
SeriesZXMN3--
Transistor Type2 N-Channel--
TypeMOSFET--
Width4 mm--
BrandDiodes Incorporated--
Fall Time9.4 ns--
Product TypeMOSFET--
Rise Time6.4 ns--
Factory Pack Quantity500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time21.6 ns--
Typical Turn On Delay Time3 ns--
Unit Weight0.002610 oz--
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SOP
FET Type--2 N-Channel (Dual)
Power Max--1.8W
Drain to Source Voltage Vdss--30V
Input Capacitance Ciss Vds--796pF @ 25V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--4.9A
Rds On Max Id Vgs--35 mOhm @ 9A, 10V
Vgs th Max Id--1V @ 250μA (Min)
Gate Charge Qg Vgs--17.5nC @ 10V
제조사 부분 # 설명 RFQ
Diodes Incorporated
Diodes Incorporated
ZXMN3A06DN8TA MOSFET Dl 30V N-Chnl UMOS
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ZXMN3A06DN8TC MOSFET 2N-CH 30V 4.9A 8SOIC
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