 | | | |
| PartNumber | ZXMN6A08E6TA | ZXMN6A08E6QTA | ZXMN6A08E6TC |
| Description | MOSFET 60V N-Chnl UMOS | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | MOSFET 60V N-Chnl UMOS |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | SOT-26-6 | SOT-26-6 | SOT-26-6 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
| Id Continuous Drain Current | 3.5 A | 2.5 A | 3.5 A |
| Rds On Drain Source Resistance | 80 mOhms | 150 mOhms | 150 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | 20 V |
| Qg Gate Charge | 5.8 nC | 5.8 nC | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
| Pd Power Dissipation | 1.1 W | 8.8 W | 1.1 W |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Product | MOSFET Small Signal | - | MOSFET Small Signal |
| Series | ZXMN6A0 | ZXMN6 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Type | MOSFET | - | MOSFET |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 6.6 S | 6.6 S | - |
| Fall Time | 4.6 ns | 4.6 ns | 2.1 ns |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 2.1 ns | 2.1 ns | 2.1 ns |
| Factory Pack Quantity | 3000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 12.3 ns | 12.3 ns | 12.3 ns |
| Typical Turn On Delay Time | 2.6 ns | 2.6 ns | 2.6 ns |
| Unit Weight | 0.000282 oz | - | 0.000529 oz |
| Qualification | - | AEC-Q101 | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMN6A08E6TA | MOSFET 60V N-Chnl UMOS | |
| ZXMN6A08KTC | MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM | ||
| ZXMN6A08GTA | MOSFET 60V 3.8A N-Channel MOSFET | ||
| ZXMN6A08E6QTA | MOSFET 60V N-Ch Enh FET 20Vgs 80mOhm | ||
| ZXMN6A08GQTA | MOSFET MOSFET BVDSS 41V 60V | ||
| ZXMN6A08GQTC | MOSFET MOSFET BVDSS 41V 60V | ||
| ZXMN6A08E6TC | MOSFET 60V N-Chnl UMOS | ||
| ZXMN6A08 | 신규 및 오리지널 | ||
| ZXMN6A08E6 , LN2117B025M | 신규 및 오리지널 | ||
| ZXMN6A08E6QTA | MOSFET 60V N-CH ENH FET 20VGS 80MOHM MOSFET N-CH 60V 2.8A SOT23-6 | ||
| ZXMN6A08E6TA | MOSFET N-CH 60V 2.8A SOT23-6 | ||
| ZXMN6A08E6TA(6A8) | 신규 및 오리지널 | ||
| ZXMN6A08E6TA-CUT TAPE | 신규 및 오리지널 | ||
| ZXMN6A08GTA-CUT TAPE | 신규 및 오리지널 | ||
| ZXMN6A08GQTA | MOSFET MOSFET BVDSS 41V 60V | ||
| ZXMN6A08GQTC | MOSFET MOSFET BVDSS 41V 60V | ||
| ZXMN6A08GTA | Darlington Transistors MOSFET 60V 3.8A N-Channel MOSFET | ||
| ZXMN6A08KTC | IGBT Transistors MOSFET 60V N-Channel MOSFET 20V VGS 24.3A IDM |