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| PartNumber | ZXMP6A13FQTA | ZXMP6A13F | ZXMP6A13FQTA-CUT TAPE |
| Description | MOSFET 60V P-Ch Enh Fet 20Vgs 625pD 219pF | ||
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-23-3 | - | - |
| Number of Channels | 1 Channel | - | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.1 A | - | - |
| Rds On Drain Source Resistance | 400 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 2.9 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 806 mW | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Series | ZXMP6 | ZXMP6 | - |
| Transistor Type | 1 P-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 1.8 S | - | - |
| Fall Time | 5.7 ns | 5.7 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 2.2 ns | 2.2 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 11.2 ns | 11.2 ns | - |
| Typical Turn On Delay Time | 1.6 ns | 1.6 ns | - |
| Unit Weight | 0.000282 oz | - | - |
| Package Case | - | TO-236-3, SC-59, SOT-23-3 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-23 | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 625mW | - |
| Drain to Source Voltage Vdss | - | 60V | - |
| Input Capacitance Ciss Vds | - | 219pF @ 30V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 900mA (Ta) | - |
| Rds On Max Id Vgs | - | 400 mOhm @ 900mA, 10V | - |
| Vgs th Max Id | - | 3V @ 250μA | - |
| Gate Charge Qg Vgs | - | 2.9nC @ 4.5V | - |
| Pd Power Dissipation | - | 806 mW | - |
| Vgs Gate Source Voltage | - | +/- 20 V | - |
| Id Continuous Drain Current | - | - 1.1 A | - |
| Vds Drain Source Breakdown Voltage | - | - 60 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 3 V | - |
| Rds On Drain Source Resistance | - | 400 mOhms | - |
| Qg Gate Charge | - | 2.9 nC | - |
| Forward Transconductance Min | - | 1.8 S | - |