 | |  | |
| PartNumber | ZXMS6004DN8-13 | ZXMS6004DN8Q-13 | ZXMS6004DN8-13-CUT TAPE |
| Description | MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ | MOSFET Low Side IntelliFET | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 1.2 A | - | - |
| Rds On Drain Source Resistance | 600 mOhms, 600 mOhms | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.56 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Tradename | IntelliFET | - | - |
| Packaging | Reel | Reel | - |
| Height | 1.75 mm | - | - |
| Length | 4.9 mm | - | - |
| Product | MOSFET | - | - |
| Series | ZXMS6004 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Type | Intellifet | - | - |
| Width | 3.9 mm | - | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 15 us | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 10 us | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 45 us | - | - |
| Typical Turn On Delay Time | 5 us | - | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Qualification | - | AEC-Q101 | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXMS6004DN8-13 | MOSFET Dual 60V N-Ch FET 500mOhm 1.3A 120mJ | |
| ZXMS6004DN8Q-13 | MOSFET Low Side IntelliFET | ||
| ZXMS6004DN8-13 | MOSFET N-CH 60V 1.3A SO8 | ||
| ZXMS6004DN8-13-CUT TAPE | 신규 및 오리지널 | ||
| ZXMS6004DN8Q-13 | LOW SIDE INTELLIFET SO-8 |