ZXT10P12DE6T stock, ZXT10P12DE6T, ZXT10P12DE6TA


PartNumber	ZXT10P12DE6TA	ZXT10P12DE6TC	ZXT10P12DE6TA(717)
Description	Bipolar Transistors - BJT 12V PNP SuperSOT4	Bipolar Transistors - BJT 12V PNP SuperSOT4
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	SMD/SMT	SMD/SMT	-
Package / Case	SOT-23-6	SOT-23-6	-
Transistor Polarity	PNP	PNP	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	- 12 V	- 12 V	-
Collector Base Voltage VCBO	- 12 V	- 12 V	-
Emitter Base Voltage VEBO	5 V	5 V	-
Collector Emitter Saturation Voltage	- 195 mV	- 195 mV	-
Maximum DC Collector Current	3 A	3 A	-
Gain Bandwidth Product fT	110 MHz	110 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZXT10	-	-
DC Current Gain hFE Max	300 at 10 mA, 2 V	300 at 10 mA, 2 V	-
Height	1.3 mm	1.3 mm	-
Length	3 mm	3.1 mm	-
Packaging	Reel	Reel	-
Width	1.75 mm	1.8 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	- 3 A	- 3 A	-
DC Collector/Base Gain hfe Min	300 at 10 mA, 2 V, 300 at 100 mA, 2 V, 180 at 2.5 A, 2 V, 60 at 8 A, 2 V, 45 at 10 A, 2 V	-	-
Pd Power Dissipation	1.1 W	1.1 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	3000	10000	-
Subcategory	Transistors	Transistors	-
Unit Weight	0.000229 oz	0.000229 oz	-

Search Part Number : "ZXT10P12DE6T", Match & Start with "ZXT10P12DE6T" - Total : 5

제조사	부분 #	설명
Diodes Incorporated	ZXT10P12DE6TA	Bipolar Transistors - BJT 12V PNP SuperSOT4
	ZXT10P12DE6TC	Bipolar Transistors - BJT 12V PNP SuperSOT4
	ZXT10P12DE6TA	Bipolar Transistors - BJT 12V PNP SuperSOT4
	ZXT10P12DE6TA(717)	신규 및 오리지널
	ZXT10P12DE6TAPBF	신규 및 오리지널

ZXT10P12DE6T