 |  | | |
| PartNumber | ZXTD09N50DE6TA | ZXTD09N50 | ZXTD09N50DE6 |
| Description | Bipolar Transistors - BJT Dual 50V NPN | ||
| Manufacturer | Diodes Incorporated | - | DIODES |
| Product Category | Bipolar Transistors - BJT | - | Transistors (BJT) - Arrays |
| RoHS | Y | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SOT-23-6 | - | - |
| Transistor Polarity | NPN | - | - |
| Configuration | Dual | - | - |
| Collector Emitter Voltage VCEO Max | 50 V | - | - |
| Collector Base Voltage VCBO | 50 V | - | - |
| Emitter Base Voltage VEBO | 5 V | - | - |
| Collector Emitter Saturation Voltage | 160 mV | - | - |
| Maximum DC Collector Current | 1 A | - | - |
| Gain Bandwidth Product fT | 215 MHz | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Series | ZXTD09 | - | - |
| DC Current Gain hFE Max | 200 at 10 mA, 2 V | - | - |
| Height | 1.3 mm | - | - |
| Length | 3.1 mm | - | - |
| Packaging | Reel | - | - |
| Width | 1.8 mm | - | - |
| Brand | Diodes Incorporated | - | - |
| Continuous Collector Current | 1 A | - | - |
| DC Collector/Base Gain hfe Min | 200 at 10 mA, 2 V, 300 at 100 mA, 2 V, 200 at 500 mA, 2 V, 75 at 1 A, 2 V, 20 at 1.5 A, 2 V | - | - |
| Pd Power Dissipation | 900 mW | - | - |
| Product Type | BJTs - Bipolar Transistors | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | Transistors | - | - |
| Unit Weight | 0.000229 oz | - | - |
| 제조사 | 부분 # | 설명 | RFQ |
|---|---|---|---|
Diodes Incorporated |
ZXTD09N50DE6TA | Bipolar Transistors - BJT Dual 50V NPN | |
| ZXTD09N50DE6TC | Bipolar Transistors - BJT Dual 50V NPN | ||
| ZXTD09N50 | 신규 및 오리지널 | ||
| ZXTD09N50DE6 | 신규 및 오리지널 | ||
| ZXTD09N50DE6TA | 신규 및 오리지널 | ||
| ZXTD09N50DE6TA(1A) | 신규 및 오리지널 | ||
| ZXTD09N50DE6TAPBF | 신규 및 오리지널 | ||
| ZXTD09N50DE6TC | TRANS 2NPN 50V 1A SOT23-6 |