ZXTN2010A stock, ZXTN2010A, ZXTN2010ASTZ


PartNumber	ZXTN2010ASTZ	ZXTN2010A	ZXTN2010ASTOA
Description	Bipolar Transistors - BJT 60V NPN Low Sat	Bipolar Transistors - BJT 60V NPN Low Sat	Bipolar Transistors - BJT NPN 60V 4.5A 3-PIN
Manufacturer	Diodes Incorporated	Diodes Incorporated	-
Product Category	Bipolar Transistors - BJT	Bipolar Transistors - BJT	-
RoHS	Y	Y	-
Mounting Style	Through Hole	Through Hole	-
Package / Case	E-Line-3	E-Line-3	-
Transistor Polarity	NPN	NPN	-
Configuration	Single	Single	-
Collector Emitter Voltage VCEO Max	60 V	60 V	-
Collector Base Voltage VCBO	150 V	150 V	-
Emitter Base Voltage VEBO	7 V	7 V	-
Maximum DC Collector Current	4.5 A	4.5 A	-
Gain Bandwidth Product fT	130 MHz	130 MHz	-
Minimum Operating Temperature	- 55 C	- 55 C	-
Maximum Operating Temperature	+ 150 C	+ 150 C	-
Series	ZXTN201	ZXTN20	-
Height	4.01 mm	4.01 mm	-
Length	4.77 mm	4.77 mm	-
Packaging	Reel	Bulk	-
Width	2.41 mm	2.41 mm	-
Brand	Diodes Incorporated	Diodes Incorporated	-
Continuous Collector Current	4.5 A	4.5 A	-
Pd Power Dissipation	1 W	1 W	-
Product Type	BJTs - Bipolar Transistors	BJTs - Bipolar Transistors	-
Factory Pack Quantity	2000	4000	-
Subcategory	Transistors	Transistors	-

Search Part Number : "ZXTN2010A", Match & Start with "ZXTN2010A" - Total : 5

제조사	부분 #	설명
Diodes Incorporated	ZXTN2010ASTZ	Bipolar Transistors - BJT 60V NPN Low Sat
Diodes Incorporated	ZXTN2010A	Bipolar Transistors - BJT 60V NPN Low Sat
	ZXTN2010ASTOA	Bipolar Transistors - BJT NPN 60V 4.5A 3-PIN
	ZXTN2010A	Bipolar Transistors - BJT 60V NPN Low Sat
	ZXTN2010ASTZ	Bipolar Transistors - BJT 60V NPN Low Sat

ZXTN2010A